View BF992_439053.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BF992 Silicon N-channel dual gate MOS-FET
Product specification Supersedes data of 1996 Jul 30 1999 Aug 11
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
APPLICATIONS * VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
1
Top view Marking code: M92.
BF992
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION
handbook, halfpage
4
3 g2 g1
d
2 s,b
MAM039
Fig.1
Simplified outline (SOT143B) and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Yfs Cig1-s Crs F Tj PARAMETER drain-source voltage (DC) drain current (DC) total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure operating junction temperature Tamb = 60 C f = 1 kHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V f = 1 MHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V f = 1 MHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V GS = 2 mS; ID = 15 mA; VDS = 10 V; VG2-S = 4 V; f = 200 MHz CONDITIONS - - - 25 4 30 1.2 - TYP. MAX. 20 40 200 - - - - 150 V mA mW mS pF fF dB C UNIT
1999 Aug 11
2
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot Tstg Tj Note 1. Device mounted on a ceramic substrate, 8 mm x 10 mm x 0.7 mm. PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature Tamb 60 C; see Fig.2; note 1 CONDITIONS - - - - - -65 - MIN. MAX. 20 40 10 10 200 +150 150
BF992
UNIT V mA mA mA mW C C
MBL033
handbook, halfpage
200 Ptot max (mW)
100
0 0 100 Tamb (o C) 200
Fig.2 Power derating curves.
1999 Aug 11
3
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a ceramic substrate, 8 mm x 10 mm x 0.7 mm. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S = VDS = 0; IG1-SS = 10 mA VG1-S = VDS = 0; IG2-SS = 10 mA VG2-S = 4 V; VDS = 10 V; ID = 20 A VG1-S = 0; VDS = 10 V; ID = 20 A VG2-S = VDS = 0; VG1-S = 7 V VG1-S = VDS = 0; VG2-S = 7 V 8 8 0.2 0.2 - - MIN. PARAMETER thermal resistance from junction to ambient in free air CONDITIONS note 1 VALUE 460
BF992
UNIT K/W
MAX. 20 20 1.3 1.1 25 25
UNIT V V V V nA nA
V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage -V(P)G1-S -V(P)G2-S IG1-SS IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage gate 1 cut-off current gate 2 cut-off current
DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 output capacitance reverse transfer capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS CONDITIONS - - - - - MIN. 20 4 1.7 2 30 1.2 TYP. 25 MAX. - - - - 40 - UNIT mS pF pF pF fF dB
1999 Aug 11
4
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
handbook, halfpage I
24
MGE797
D (mA)
handbook, halfpage
30
MGE799
4V3V VG2-S = 5 V 2V
20
VG1-S = 0.2 V 0.1 V 0V
ID (mA) 20
16
12
1V
-0.1 V -0.2 V -0.3 V 10 0V
8
4
-0.4 V -0.5 V -0.6 V 0 -1
0 0 2 4 6 8 10 VDS (V) 12
0
VG1-S (V)
1
VG2-S = 4 V; Tj = 25 C.
VDS = 10 V; Tj = 25 C.
Fig.3 Output characteristics; typical values.
Fig.4 Transfer characteristics; typical values.
handbook, halfpage
30
MGE798
handbook, halfpage
30
MGE800
|yfs| (mS) 20
5V 4V 3V 2V
Yfs (mS) 20
VG2-S = 5V 4V 3V
10 1V VG2-S = 0 V 0 0 10 ID (mA) 20
10 2V
1V 0 -1 0V 0 VG1-S (V) 1
VDS = 10 V; Tj = 25 C.
VDS = 10 V; Tj = 25 C.
Fig.5
Forward transfer admittance as a function of drain current; typical values.
Fig.6
Forward transfer admittance as a function of gate 1-source voltage; typical values.
1999 Aug 11
5
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
102 handbook, halfpage yis (mS) 10 bis
MGE794
MGE793
handbook, halfpage
10
yos (mS)
bos
1
1 gis 10-1 10-1 gos
10-2 10
102
f (MHz)
103
10-2 10 102 f (MHz) 103
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C.
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C.
Fig.7
Input admittance as a function of frequency; typical values.
Fig.8
Output admittance as a function of frequency; typical values.
handbook, halfpage
25
MGE795
Yfs (mS) 20
gfs
handbook, halfpage
120
MGE796
yrs (S) 80
15 -brs 10
-bfs
40
5 grs 0 10 0 10
102
f (MHz)
103
102
103 f (MHz)
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C.
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C.
Fig.9
Forward transfer admittance as a function of frequency; typical values.
Fig.10 Reverse transfer admittance as a function of frequency; typical values.
1999 Aug 11
6
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
PACKAGE OUTLINE Plastic surface mounted package; 4 leads
BF992
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Aug 11
7
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF992
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 11
8
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
NOTES
BF992
1999 Aug 11
9
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
NOTES
BF992
1999 Aug 11
10
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
NOTES
BF992
1999 Aug 11
11
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/03/pp12
Date of release: 1999
Aug 11
Document order number:
9397 750 06013

▲Up To Search▲

Price & Availability of BF992

	To Download BF992 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .